apt25gl q 120jcu2 APT25GLQ120JCU2 C rev 2 february, 2013 www.microsemi.com 1-5 application ? ac and dc motor control ? switched mode power supplies ? power factor correction ? brake switch features ? trench + field stop fast igbt 4 technology - low voltage drop - low leakage current - low switching losses - low leakage current - rbsoa and scsoa rated ? boost sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? low conduction losses ? stable temperature behavior ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant all ratings @ t j = 25c unless otherwise specified absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v i c continuous collector current t c = 25c 45 a t c = 80c 25 i cm pulsed collector current t c = 25c 50 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 170 w rbsoa reverse bias safe operating area t j = 150c 50a @ 1100v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com k e c g isotop ? v ces = 1200v i c = 25a @ tc = 80c isotop ? boost chopper trench + field stop fast igbt4 p ower modul e k c g e downloaded from: http:///
apt25gl q 120jcu2 APT25GLQ120JCU2 C rev 2 february, 2013 www.microsemi.com 2-5 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a v ce(sat) collector emitter saturation voltage v ge = 15v i c = 25a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 0.8ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 1430 pf c oes output capacitance 115 c res reverse transfer capacitance 85 q g gate charge v ge = 15v ; v ce =600v i c = 25a 0.2 c t d(on) turn-on delay time inductive switching (25c) v ge = 15v v ce = 600v i c = 25a r g = 20 130 ns t r rise time 20 t d(off) turn-off delay time 300 t f fall time 45 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v ce = 600v i c = 25a r g = 20 150 ns t r rise time 35 t d(off) turn-off delay time 350 t f fall time 80 e on turn-on switching energy v ge = 15v v ce = 600v i c = 25a r g = 20 t j = 25c 1.2 mj t j = 150c 1.8 e off turn-off switching energy t j = 25c 1.5 mj t j = 150c 2.2 i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 100 a chopper sic diode rating s and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 70 500 a t j = 175c 200 700 i f dc forward current tc = 125c 15 a v f diode forward voltage i f = 15a t j = 25c 1.5 1.8 v t j = 175c 2.2 3 q c total capacitive charge i f = 15a, v r = 600v di/dt = 400a/s 100 nc c total capacitance f = 1mhz, v r = 400v 74 pf f = 1mhz, v r = 800v 54 downloaded from: http:///
apt25gl q 120jcu2 APT25GLQ120JCU2 C rev 2 february, 2013 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance igbt 0.9 c/w sic diode 1.1 r thja junction to ambient (igbt & diode) 20 v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 2500 v t j ,t stg storage temperature range -55 175 c t l max lead temp for soldering:0.063 from case for 10 sec 300 torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) 3.30 (.130)4.57 (.180) isotop? is a registered trademark of st microelectronics nv typical performance curve hard switching zcs zvs 0 50 100 150 200 250 01 02 03 04 05 0 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =20 ? t j =150c tc=75c operating frequency vs collector current downloaded from: http:///
apt25gl q 120jcu2 APT25GLQ120JCU2 C rev 2 february, 2013 www.microsemi.com 4-5 output characteristics (v ge =15v) t j =25c t j =150c 0 10 20 30 40 50 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 10 20 30 40 50 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 10 20 30 40 50 5 6 7 8 9 10111213 v ge (v) i c (a) energy losses vs collector current eon eoff 0 1 2 3 4 5 6 0 1 02 03 04 05 0 i c (a) e (mj) v ce = 600v v ge = 15v r g = 20 ? t j = 150c eon eoff 0 1 2 3 4 0 2 04 06 08 0 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 25a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 60 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =150c r g =20 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) downloaded from: http:///
apt25gl q 120jcu2 APT25GLQ120JCU2 C rev 2 february, 2013 www.microsemi.com 5-5 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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